Revolutionizing Ultrahigh-Speed CMOS Image Sensors
The quest to develop ultrahigh-speed complementary metal-oxide semiconductor (CMOS) image sensors is fraught with challenges. At extremely high frame rates, the short integration time available for each image capture severely limits the photon interaction. Consequently, sensors in this domain require exceptional sensitivity to capture every available photon.
Another critical aspect is quickly extracting the generated signal electrons to prevent image blur due to subsequent frames, a phenomenon known as lag. Additionally, processing and transmitting the large volumes of data from high-resolution, high-dynamic-range CMOS sensors at ultrahigh speeds necessitates innovative solutions to prevent data loss.
Innovative CMOS Image Sensor Design
To detect weak signals effectively, it’s crucial to maximize the signal-to-noise ratio. This involves not only enhancing quantum efficiency but also minimizing noise within the sensor. Operating the sampler circuits, pre-amplifiers, and analog-to-digital converters at high speeds tends to amplify noise.
The optimization of these circuits, including transistor geometries and layout, for speed, noise, and crosstalk requires extensive knowledge of mixed-signal circuit design and fabrication processes, along with comprehensive simulation and verification using advanced software tools.
SI Sensors leverages its team of CMOS experts to design sensors that push physical limits. For ultrafast imaging, they have developed novel structures within photodiodes to create electric fields, speeding up electron signal transfer out of the photodiode and increasing temporal resolution to nanosecond accuracy.
Breakthroughs in Data Storage and Transmission
SI Sensors is innovatively integrating charge-coupled device (CCD) technology into CMOS sensors, known as CCD-in-CMOS. Traditional CCDs store signals as charge, avoiding the limitations of voltage conversion and digitization during rapid imaging.
This integrated approach uses CCD storage as analog memory, allowing thousands of nanosecond-resolution frames to be captured with high-dynamic range and low noise. Once the sequence is complete, the CCD array is read out at a slower speed, minimizing noise.
The collected data then passes through CMOS pre-amplifiers, analog-to-digital conversion circuits, and high-speed serial interfaces to the camera system, ensuring high-integrity data transfer.
By combining the advantages of both CCD and CMOS technologies, CCD-in-CMOS enhances capabilities in burst-mode imaging, delivering ultrafast capture speed with exceptional sensitivity and image quality.
Key Features and Benefits
Ultrafast Burst Mode: These sensors can capture millions of frames per second, ideal for scientific research, industrial testing, and medical diagnostics involving fast transient events.
High Sensitivity and Low Noise: CCD-in-CMOS sensors maintain high signal-to-noise ratios, providing clear and detailed images even in low-light environments.
Efficient Data Handling: Advanced in-situ storage and readout mechanisms reduce system complexity, facilitating ease of use.
Versatile Applications: Adaptable to high-speed video recording, hyperspectral imaging, and more, CCD-in-CMOS technology offers a variety of imaging solutions.
Conclusion
SI Sensors’ advancements in ultrahigh-speed CMOS image sensors represent a significant leap forward in imaging technology. By overcoming traditional limitations, these sensors deliver exceptional performance in ultrafast and high-dynamic-range imaging. This innovation not only enables clearer and more detailed image capture but also enhances a variety of applications across scientific, industrial, and medical fields.
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