Altermagnetism is a hybrid form of ferromagnetism and antiferromagnetism that might have significant implications in the fields of magnetic storage and spintronics. In a recent breakthrough, researchers have made the first steps towards controlling the creation of these altermagnets. This development could lead to groundbreaking advancements in digital devices as we know them.
The study by O. J. Amin et al. published in Nature earlier this month builds upon the team’s earlier research on the detection of altermagnetism in manganese telluride (MnTe). This new research uses a photoemission electron microscope (PEEM) with X-rays to image nanoscale altermagnetic structures within the material. Additionally, the team controlled the spin orientation of these structures using microstructure patterning and thermal cycling in magnetic fields.
The use of electron beam lithography enabled the creation of large single-domain altermagnetic structures, a significant development for future research in this area. However, as the researchers note in their outlook section, this study is still largely about creating the basic means to use altermagnetism, even for simple applications like data storage.
Understanding plain old magnetism can sometimes be a challenge, let alone the more complex world of magnetism found in altermagnetism and other related phenomena like skyrmions. With these recent advancements in our understanding and ability to control altermagnetic structures, we are opening up new possibilities for advanced materials and devices that could fundamentally change the way we interact with digital technologies.
As we continue to push the boundaries of our knowledge in this field, it is clear that the opportunities for innovation and discovery are endless. With the right investment in research and development, altermagnetism could become a game-changer in the world of magnetism and spintronics.